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Optimization of formaldehyde detection performance based on Ni2+ sensitized monodisperse amorphous zinc tin oxide microcubes
摘要： The pure and Ni2+ sensitized monodisperse amorphous zinc tin oxide (a-ZTO) microcubes were synthesized via an in-situ precipitation method and subsequent wet impregnation. XPS results revealed that Ni2+ sensitization increased the relative content of chemisorbed oxygen and oxygen vacancies on the surface of a-ZTO microcubes. Compared to pure a-ZTO microcubes, 0.75 at% Ni2+ sensitized a-ZTO microcubes can significantly improve the gas sensing performance to formaldehyde at 200 °C, which may be attributed to its uniform morphology and modification of Ni2+ on the surface of a-ZTO microcubes. Further, the gas sensing mechanism is briefly discussed.
关键词： Surface sensitization,Zinc tin oxide,Monodisperse,Amorphous material,Sensors
更新于2025-09-23 15:22:29
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P-1.3: The conductivity modulation of amorphous zinc tin oxide thin film by Ar plasma treatment
摘要： We propose a method to form low-resistance amorphous zinc tin oxide thin film (a-ZTO) by Ar plasma. The results show that the Ar plasma treatment can effectively decrease the resistivity of the a-ZTO. The ZTO film treated with Ar plasma at suitable time and moderate operating power, exhibits a low sheet resistance of 2.3 kΩ/□. With the help of PECVD-SiOx coverage layer, the sheet resistance of Ar-plasma treated ZTO is enhanced and increases only one order of magnitude after annealing at 230 ℃. As a result, an optimized Ar plasma treatment for fabrication of low-resistance a-ZTO film is presented.
关键词： amorphous zinc tin oxide,thermal stability,Ar plasma treatment,low-resistance
更新于2025-09-23 15:22:29
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Highly stable and efficient planar perovskite solar cells using ternary metal oxide electron transport layers
摘要： In planar perovskite solar cells, the electron transport layer (ETL) plays a vital role in effective extraction and transportation of photogenerated electrons from the perovskite layer to the cathode. Ternary metal oxides exhibit excellent potentials as ETLs since their electrical and optical properties are attunable through simple compositional adjustments. In this paper, we demonstrate the use of solution-processed zinc oxide (ZnO) and zinc tin oxide (ZTO) films as highly efficient ETLs for perovskite solar cells. We observe poor compatibility between ZnO and perovskite which impedes device reproducibility, stability, and performance unlike ZTO ETL devices. Furthermore, we modify the ZTO/perovskite interface by introducing a thin passivating SnO2 interlayer. The Zn1Sn1Ox/SnO2 ETL device demonstrates paramount power conversion efficiency (PCE) of 19.01% with corresponding short circuit current density (Jsc), open circuit voltage (Voc), and fill factor (FF) values of 21.93 mA cm?2, 1.10 V, and 78.82%. Moreover, the Zn1Sn1Ox/SnO2 ETL device displays superior stability, maintaining 90% of its initial PCE after 90 days in the absence of encapsulation at relative humidity of 30–40%. Enhancement in charge extraction, favourable energy alignment, and reduction in recombination sites greatly contribute to the optimal performance, stability, and reproducibility of the Zn1Sn1Ox/SnO2 ETL device.
关键词： Photovoltaic performance,Zinc tin oxide,Electron transport layer,Perovskite solar cells,Long-term stability
更新于2025-09-16 10:30:52
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Improving the charge balance and performance of CdSe/ZnS quantum-dot light-emitting diodes with a sputtered zinc-tin-oxide electron-transport layer and a thermally evaporated tungsten-oxide charge-restricting layer
摘要： The charge carrier balance and performance of CdSe/ZnS quantum-dot light-emitting diodes (QD-LEDs) with a vacuum-deposited electron-transport layer (ETL) and carrier-restricting layer (CRL) were successfully improved. Optimizing the fabrication process of the reactively sputtered zinc-tin-oxide (ZTO) ETL and adopting a thermally evaporated tungsten-oxide (WOx) CRL improved the electron-hole balance, thus leading to QD-LEDs with improved performance. Impedance spectroscopy analysis was successfully exploited in investigating charge carrier injection into each layer of the QD-LED and electron-hole recombination behaviors. The QD-LED with optimized ZTO ETL and without WOx CRL exhibited 2600 cd m?2 luminance and 3.2 cd A?1 current efficiency, and the QD-LED with both optimized ZTO ETL and a WOx CRL exhibited 3900 cd m?2 luminance and 5.1 cd A?1 current efficiency. These results imply a practical method for improving the electron-hole balance and performance of QD-LEDs, and provide a reliable technique for analyzing the carrier behavior of QD-LEDs.
关键词： CdSe/ZnS quantum-dot,light-emitting diodes,tungsten-oxide,charge balance,zinc-tin-oxide,impedance spectroscopy
更新于2025-09-11 14:15:04
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High-mobility material research for thin-film transistor with amorphous thallium–zinc–tin oxide semiconductor
摘要： The applicability of thallium–zinc–tin oxide (TlZnSnO) as a channel material for a thin-?lm transistor (TFT) was investigated by ?rst-principles simulation and cosputtering experiment with XZnSnO (X = Al, Ga or In). The electron effective mass (m*) of Tl0.4ZnSnO was simulated to be >0.153, which is much smaller than that of In0.4ZnSnO (0.246). An In0.4ZnSnO TFT exhibited a mobility (μ) of 32.0 cm2 V%1 s%1 in the experiment; therefore, the Tl0.4ZnSnO TFT was expected to have a higher mobility of approximately 50 cm2 V%1 s%1 following the relation (μ / 1/m*). Moreover, the Tl-related oxide semiconductor would provide better TFT stability because its oxide vacancy is more stable than that of an In-related oxide semiconductor.
关键词： first-principles simulation,thallium–zinc–tin oxide,mobility,cosputtering,electron effective mass,thin-?lm transistor
更新于2025-09-09 09:28:46