研究目的
To investigate the hydrogen-induced etching phenomenon of wrinkled graphene domains and understand the growth details of CVD-grown graphene on Cu, as well as to explore its potential for fabricating functional graphene nanostructures.
研究成果
The study demonstrates layer-dependent wrinkle distributions in graphene grown on Cu by LPCVD and reveals a special hydrogen-induced etching phenomenon of wrinkled multilayer graphene domains. The findings provide insights into the formation of wrinkles in CVD growth graphene domains and their selective etching process, offering guidance for the fabrication of well-defined graphene nanostructures.
研究不足
The study focuses on the etching behavior of wrinkled graphene domains under specific conditions (fast cooling and hydrogen etching). The generalizability of the findings to other conditions or materials is not explored. Additionally, the study does not address the potential impact of other environmental factors on the etching process.
1:Experimental Design and Method Selection:
The study involved the synthesis of graphene on Cu foil using LPCVD, followed by a fast cooling process to induce wrinkles. Hydrogen etching experiments were then conducted to study the etching behavior of wrinkled graphene domains.
2:Sample Selection and Data Sources:
Graphene samples were grown on electrochemically polished Cu foil. The samples were characterized using optical microscopy, Raman spectroscopy, AFM, and SEM.
3:List of Experimental Equipment and Materials:
A 25 μm thick Cu sheet was used for graphene synthesis. The LPCVD system (Xiamen G-CVD) was employed for graphene growth. Characterization was performed using a digital optical microscope (MV5000), SEM (Sigma, Zeiss Inc.), Raman spectrometer (Alpha-300, WITec), and AFM (Dimension Icon, Bruker).
4:Experimental Procedures and Operational Workflow:
The Cu foil was folded into a pocket-like structure, loaded into the LPCVD system, and heated under specific gas flows for graphene growth. After growth, the system was cooled down at different rates. The samples were then annealed in Ar/H2 gas mixture for etching studies.
5:Data Analysis Methods:
The morphology and structure of the graphene samples were analyzed using optical microscopy, SEM, AFM, and Raman spectroscopy. Statistical analysis was performed to quantify etching preferences on wrinkled sites.
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AFM
Dimension Icon
Bruker
Topography evaluation
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SEM
Sigma
Zeiss Inc.
Surface morphology characterization
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Cu sheet
Stock No. 46365
Alfa Aesar Inc.
Substrate for graphene synthesis
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LPCVD system
Xiamen G-CVD
Graphene growth
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Digital optical microscope
MV5000
Nanjing Jiangnan Novel Optics Co., Ltd.
Optical microscopy studies
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Raman spectrometer
Alpha-300
WITec Wissenschaftliche Instrumente und Technologie GmbH
Raman analysis
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