研究目的
Investigating the surface condition of sol–gel SiO2 on top of Si and improving its wet-etching property for waveguide device passivation.
研究成果
The study confirms that the anti-etching property of sol–gel SiO2 is due to the formation of a polymer layer after curing. Plasma ashing in addition to 700 °C curing improves the surface condition, enabling regular wet etching with an etching rate of 1800 nm min?1.
研究不足
The study is limited to the sol–gel method for SiO2 formation and its wet-etching properties. The effects of other SiO2 formation methods and their etching properties are not compared.
1：Experimental Design and Method Selection:
The study investigates the sol–gel method for SiO2 formation, focusing on the surface condition and wet-etching properties.
2：Sample Selection and Data Sources:
Si wafers are used as substrates for sol–gel SiO2 formation.
3：List of Experimental Equipment and Materials:
Spin coater, hot plate, vacuum chamber, O2 plasma asher, buffered hydrogen fluoride (BHF).
4：Experimental Procedures and Operational Workflow:
Preparation of sol–gel solution, spin coating, post baking, curing, O2 plasma ashing, and wet etching.
5：Data Analysis Methods:
Cross-section observation and etching rate measurement.
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