研究目的
Investigating the electrically active defects in plated crystalline silicon n+p solar cells using Deep-Level Transient Spectroscopy (DLTS) to compare laser ablation with standard wet etching for contact opening.
研究成果
The study identifies a consistent hole trap at 0.17 eV above the valence band in all samples, attributed to substitutional nickel. Additional point defects are observed after wet etching and standard LA, while hard LA introduces a broad band associated with dislocations. The findings suggest Ni in-diffusion during contact processing and highlight the impact of contact opening methods on defect formation.
研究不足
The study is limited by the specific conditions of the laser ablation and wet etching processes used, and the focus on n+p solar cells with copper metallization and a nickel diffusion barrier. The interpretation of DLTS spectra is complex and may not capture all defect types.
1：Experimental Design and Method Selection:
The study employs DLTS to assess electrically active defects in crystalline silicon n+p solar cells with copper metallization and a nickel diffusion barrier. Contact opening methods compared include laser ablation (LA) and standard wet etching.
2：Sample Selection and Data Sources:
P-doped n+-type emitters fabricated by POCl3 diffusion into 1–3 Ωcm p-type Czochralski silicon substrates. Passivation achieved by PECVD of a SiNx:H layer on top of SiO
3：List of Experimental Equipment and Materials:
UV-laser ablation system (355 nm wavelength), nickel and copper plating equipment, DLTS system from PhysTech, liquid-nitrogen flow cryostat.
4：Experimental Procedures and Operational Workflow:
Contact opening by LA or wet etching, followed by nickel and copper plating. DLTS measurements performed on diodes cut from the solar cells, with I-V and C-V measurements at room temperature.
5：Data Analysis Methods:
DLTS spectra analyzed for deep levels, with Arrhenius plots derived for activation energies and hole capture cross sections.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
