摘要： In this paper, we have proposed the strategy to fulfill the vertically stacked subpixel (VSS) micro-light-emitting diodes (μ-LEDs) for future ultra-high resolution microdisplays. At first, to vertically stack the LED with different colors, we have successfully adopted the bonding interface engineered monolithic integration method by using SiO2/SiNx distributed Bragg reflectors (DBRs). It was found that an intermediate DBR structure can be performed as the bonding layer and the color filter, which can reflect and transmit desired wavelengths the bonding interface. Furthermore, the optically pumped μ-LEDs array with 0.4 μm pitch corresponding to ultra-high-resolution of 63500 PPI was successfully fabricated by using typical semiconductor processing, including electron-beam lithography. Compared with pick-and-place with the limitation of the machine alignment accuracy, there is a significant improvement for fabricating the high-density μ-LEDs. Finally, we have systematically investigated the effects of surface traps by using time-resolved photoluminescence (TRPL) and two-dimensional simulation. These results clearly demonstrated that performance improvements could be possible by employing the optimal passivation techniques according to diminishing the pixel size for low power and highly-efficient microdisplays.