研究目的
Investigating the linearity characterization of graphene on silicon electro-absorption modulators and phase modulators for integrated microwave photonics applications.
研究成果
The graphene-based electro-absorption modulators and electro-refractive phase modulators are both highly linear with SFDRIM D of 109.55 dB·Hz2/3 and 121.05 dB·Hz2/3 under optimized bias voltage, comparable to mature LiNbO3 Mach-Zehnder modulators. These results pave the way to the realization of graphene modulators for microwave photonics applications where a highly linear and integrated modulator is crucial.
研究不足
The study focuses on the TE fundamental mode of graphene modulators for linearity characterization, potentially limiting the applicability to other modes. The SFDR can be increased by enhancing interaction between graphene and the optical mode or structure optimization.
1：Experimental Design and Method Selection:
The study employs the electro-absorption and electro-refractive effect of graphene for modulation. Finite element method (FEM) by COMSOL Multiphysics software was used for simulation and analysis.
2：Sample Selection and Data Sources:
A single layer graphene is transferred onto 220nm rib silicon waveguide with 10nm thick alumina insulator layer.
3：List of Experimental Equipment and Materials:
Graphene-based modulator on a commercial SOI wafer, COMSOL Multiphysics software.
4：Experimental Procedures and Operational Workflow:
The operation principle is based on Pauli blocking effect of graphene. The linearity of graphene modulators was analyzed based on single straight waveguide and unbalanced Mach-Zehnder (MZ) structure.
5：Data Analysis Methods:
A two-tones approach was used to obtain SFDR and evaluate the nonlinear distortions. The relationship between applied voltage and graphene chemical potential was described and the time-domain output signal was obtained through FEM simulation and calculation.
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