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Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals

DOI:10.1134/S1063782619100191 期刊:Semiconductors 出版年份:2019 更新时间:2025-09-11 14:15:04
摘要: Two different approaches to the integration of self-assembled Ge(Si) quantum dots into two-dimensional photonic crystals are considered. One approach includes the synthesis of an ordered array of Ge(Si) quantum dots on the textured surface of a substrate followed by the formation of a photonic crystal on this array. In the other approach, the photonic crystal itself serves as a template for the ordered growth of quantum dots. It is shown that, by varying the diameter of holes of photonic crystals in the second approach, it is possible to implement the growth of quantum dots in two modes, in which quantum dots are formed inside or outside the holes of the photonic crystal. For structures with ordered quantum dots incorporated into a photonic crystal, an increase in the photoluminescence signal intensity is detected at room temperature in the spectral range 0.9–1.2 eV. This increase is attributed to the interaction of emission from the structure with radiation modes of the photonic crystal.
作者: Zn. V. Smagina,V. A. Zinovyeva,E. E. Rodyakina,B. I. Fomina,M. V. Stepikhova,A. N. Yablonskiy,S. A. Gusev,A. V. Novikov,A. V. Dvurechenskii
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To investigate different approaches to the integration of self-assembled Ge(Si) quantum dots into two-dimensional photonic crystals and to study the luminescence properties of such systems.

Different approaches to the incorporation of ordered self-assembled arrays of Ge(Si) quantum dots into microcavities based on two-dimensional photonic crystals were considered. It was shown that, by varying the diameter of photonic crystal holes, it is possible to actualize two modes of growth of quantum dots such that the quantum dots are formed inside or outside the photonic crystal holes. An increase in the intensity of the photoluminescence signal at room temperature in the spectral range 0.9–1.2 eV was detected for structures with ordered quantum dots incorporated into a photonic crystal.

The relatively low surface density of ordered quantum dots and the increased Si fraction in them compared to quantum dots formed on a planar Si surface. The low surface density of ordered quantum dots is responsible for the predominance of the signal from the Ge wetting layer in the PL spectra of structures with ordered quantum dots.

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