研究目的
Investigating the structural modifications and Ge segregation in SiGeO and GeTiO amorphous films induced by UV laser pulse annealing.
研究成果
The study reveals high diffusivity of Ge atoms in the laser pulse field, similar to diffusivity in the liquid state, and the formation of Ge nanoparticles during laser pulse action.
研究不足
The study is limited to the observation of structural modifications in a nanometric layer under the film surface, with the oxide matrix remaining in solid phase during the laser pulse action.
1：Experimental Design and Method Selection:
The study involved the production of amorphous SiGeO and GeTiO films by magnetron sputtering deposition on Si wafers, followed by laser pulse irradiation using the fourth harmonics radiation of the Nd-YAG laser.
2：Sample Selection and Data Sources:
Films with different Ge/oxide ratios were used.
3：List of Experimental Equipment and Materials:
JEM ARM200F electron microscope for structural investigation, Nd-YAG laser for irradiation.
4：Experimental Procedures and Operational Workflow:
Films were irradiated with low laser pulse fluences between 15 and 100 mJ/cm
5：Structural modifications were studied using XTEM. Data Analysis Methods:
XTEM structural study was used to analyze the modifications induced by laser pulse irradiation.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
