研究目的
Evaluating the crystalline quality of bulk GaN substrates and the properties of InGaN films grown on them, focusing on the influence of substrate hardness on the growth and properties of InGaN films.
研究成果
The hardness of GaN substrates significantly influences the growth mode and properties of InGaN films. Hard GaN substrates resist deformation, leading to improved crystalline quality and photoluminescence properties of InGaN films. This suggests that substrate hardness is a critical factor for the epitaxial growth of III–V nitride layers.
研究不足
The study is limited by the difficulty in polishing hard GaN substrates, which may affect surface quality and defect analysis. The origin of hardness in GaN substrates is not fully clarified, which could influence the interpretation of results.
1：Experimental Design and Method Selection:
The study involved evaluating the crystalline quality of bulk GaN substrates and the properties of InGaN films grown on them using photothermal de?ection spectroscopy (PDS) and hard x-ray photoemission spectroscopy (HAXPES).
2：Sample Selection and Data Sources:
Conventional and hardness-controlled bulk GaN substrates were used. InGaN films were grown on these substrates by metalorganic chemical vapor deposition (MOCVD).
3：List of Experimental Equipment and Materials:
Equipment included a semiconductor laser for PDS, a revolver undulator beamline for HAXPES, and MOCVD apparatus for film growth.
4：Experimental Procedures and Operational Workflow:
The substrates were characterized by XRD, PDS, and HAXPES before and after InGaN film growth. The growth conditions and subsequent analyses were carefully controlled and documented.
5：Data Analysis Methods:
The data from PDS and HAXPES were analyzed to determine Urbach energy and tail states. XRD and photoluminescence measurements were used to assess crystalline quality and optical properties.
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