研究目的
Investigating the design and fabrication of a high efficiency silicon nitride waveguide grating coupler with a multilayer bottom reflector for photonic integrated circuits.
研究成果
The study successfully demonstrated a high efficiency silicon nitride waveguide grating coupler with a multilayer bottom reflector, achieving a peak coupling efficiency of ?1.75 dB and a 3 dB bandwidth of 76.34 nm. The design and fabrication process is CMOS-compatible, offering a practical solution for photonic integrated circuits.
研究不足
The study is limited by the fabrication tolerance of the multilayer reflector and the precision required in controlling the thickness of the BOX layer. The coupling efficiency could potentially be improved further with more precise fabrication techniques.
1：Experimental Design and Method Selection:
The study involved the design of an apodized grating coupler with a bottom multilayer reflector, using the transfer matrix method for modeling and 2D finite difference time domain method (FDTD) for optimization.
2：Sample Selection and Data Sources:
Silicon wafers were used as substrates, with SiNx and SiO2 films deposited using LSCVD.
3：List of Experimental Equipment and Materials:
Equipment included electronic beam lithography (EBL) and ion coupling plasma (ICP) with CHF3 gas for patterning. Materials included silicon nitride and silicon dioxide films.
4：Experimental Procedures and Operational Workflow:
The fabrication involved depositing alternate SiNx and SiO2 layers, patterning waveguide and grating structures, and measuring coupling efficiencies.
5：Data Analysis Methods:
Coupling efficiencies were calculated and compared with experimental results to validate the design.
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