研究目的
To demonstrate a GeSn-on-insulator platform for monolithic optoelectronic integration for applications at 2 μm wavelength.
研究成果
GeSn photodiode and p-FinFET were demonstrated on a novel GeSnOI platform formed through direct wafer bonding and layer transfer technique. The GeSn photodetector shows low leakage with high on/off ratio and extended photo response to beyond 2-μm wavelengths. The GeSn p-FinFET with good electrical characteristics was also demonstrated. This work paves the way for monolithic integration of GeSn based photonics operating at 2-μm range and beyond and electronics on a common GeSnOI platform.
研究不足
The bandwidth is limited by large parasitic capacitance, which could be improved through further optimization by isolating the photodiode mesa and using thicker BOX with high resistivity Si handle wafer.
1：Experimental Design and Method Selection:
The GeSn-on-insulator (GeSnOI) platform was formed by direct wafer bonding and layer transfer technique. GeSn photodiode and p-channel FinFET were fabricated on this platform.
2：Sample Selection and Data Sources:
GeSn film with a thickness of ~85 nm was grown on strain-relaxed Ge buffer on a Si donor wafer by reduced pressure chemical vapor deposition (RPCVD).
3：List of Experimental Equipment and Materials:
Equipment includes RPCVD, plasma enhanced CVD (PECVD), chemical mechanical polishing (CMP), inductively coupled plasma (ICP), electron beam lithography (EBL), and atomic layer deposition (ALD). Materials include GeSn, SiO2, Ti, Pt, HfO2, Mo/W, and Ni.
4：Experimental Procedures and Operational Workflow:
The process involved GeSn film growth, SiO2 deposition and planarization, wafer bonding, backside Si removal, Ge buffer thinning, photodiode and FinFET fabrication, and characterization.
5：Data Analysis Methods:
Optical and electrical characterization was performed, including dark current-bias voltage (Idark-Vbias) and responsivity-bias voltage (Rop-Vbias) measurements, and frequency response analysis.
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