1：Experimental Design and Method Selection:

The study involved the synthesis of CdSe QDs by colloidal method and the growth of GaAs nanostructures on GaAs (111)B substrate by metal organic vapor phase epitaxy (MOVPE) using self-assembled Ga droplets as catalyst. The interaction between CdSe QDs and GaAs nanostructures was studied using steady state and time-resolved photoluminescence (TRPL) techniques.

2：Sample Selection and Data Sources:

CdSe QDs of size 3.9 nm were synthesized and coated over GaAs nanostructures. The effect of catalyst growth time and temperature on the growth of GaAs nanostructures was studied.

3：9 nm were synthesized and coated over GaAs nanostructures. The effect of catalyst growth time and temperature on the growth of GaAs nanostructures was studied. List of Experimental Equipment and Materials:

3. List of Experimental Equipment and Materials: The study used Perkin-Elmer Lambda 1050 UV/vis/NIR spectrophotometer, Edinburgh Instruments FLSP920 spectrophotometer, atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and Horiba HR Evolution confocal micro-Raman spectrometer.

4：Experimental Procedures and Operational Workflow:

The Ga droplets were grown on GaAs (111)B substrates at 500 °C for 10 s and 20 s. The growth of GaAs nanostructures was conducted at 420 °C and 450 °C. The samples were characterized by AFM, FESEM, TEM, and Raman spectroscopy.

5：Data Analysis Methods:

The PL and TRPL data were analyzed to understand the interaction between CdSe QDs and GaAs nanostructures. The TRPL decay curves were fitted using a triple exponential decay function.