研究目的
Investigating the voltage-assisted SILAR deposition of CdSe quantum dots into mesoporous TiO2 film for enhancing the performance of quantum dot-sensitized solar cells (QDSSCs).
研究成果
The voltage-assisted SILAR method accelerates the growth of CdSe QDs in mesoporous TiO2 film, enhancing the performance of QDSSCs with an optimal PCE of 3.27%. The method provides a rapid and efficient strategy for QDs assembly, balancing photon capture and charge recombination.
研究不足
The study is limited by the potential for charge recombination at the TiO2/QDs/electrolyte interface with increased QDs loading, which can reduce the power conversion efficiency (PCE) of the QDSSCs.
1：Experimental Design and Method Selection:
The study employs a voltage-assisted SILAR method to deposit CdSe QDs into mesoporous TiO2 film at room temperature.
2：Sample Selection and Data Sources:
Mesoporous TiO2 films are used as substrates for CdSe QDs deposition.
3：List of Experimental Equipment and Materials:
A Maynuo M8811 DC source meter is used for applying voltage, and a two-electrode system with a graphite rod as the counter electrode is employed.
4：Experimental Procedures and Operational Workflow:
The TiO2 film is alternately dipped into Cd(NO3)2·4H2O methanol solution and Na2SeSO3 aqueous solution under 2 V voltage for 30 s each, followed by rinsing.
5：Data Analysis Methods:
The performance of QDSSCs is evaluated using J-V curves, UV-vis-NIR absorption spectra, and electrochemical impedance spectroscopy (EIS).
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