研究目的
Investigating the efficiency and reliability of III‐V//Si multijunction solar cells using smart stack technology with Pd nanoparticle array.
研究成果
The study successfully fabricated an InGaP/AlGaAs//Si three‐junction solar cell with a maximum efficiency of 30.8% under AM 1.5G illumination, demonstrating the potential of GaAs//Si MJ solar cells as next-generation photovoltaic cells. The smart stack technology proved effective in fabricating high-efficiency multijunction cells, with the device showing high long-term stability under severe conditions.
研究不足
The study acknowledges the relatively high bonding resistivity and the presence of a residual oxidation region in the TOPCon Si surface, suggesting areas for optimization in the bonding process.
1：Experimental Design and Method Selection:
The study involved the fabrication of an InGaP/AlGaAs//Si three‐junction solar cell using smart stack technology, a unique mechanical stacking method with Pd nanoparticle array. The design focused on optimizing the upper GaAs‐based cell structure and employing a tunnel oxide passivated contact (TOPCon) Si cell as the bottom cell.
2：Sample Selection and Data Sources:
The samples included InGaP/AlGaAs//Si three‐junction solar cells. Data was collected through current-voltage characteristics, external quantum efficiencies (EQE) measurements, and reliability testing under damp heat conditions.
3：List of Experimental Equipment and Materials:
Equipment used included a solar simulator (Model 38A042Y, Bunkoukeiki Corporation), spectral response measurement system (Model CEP-25C1, Bunkoukeiki Corporation), and an AMM-2000 semiconductor parametric test system (ESPEC Corporation). Materials included Pd nanoparticles for the bonding interface.
4：Experimental Procedures and Operational Workflow:
The process involved bonding the upper and bottom cells with Pd nanoparticles at room temperature under a light load. Performance was measured under AM 1.5G solar spectrum illumination and low solar concentration conditions. Reliability was tested under damp heat conditions (85 °C and 85% humidity for 1000 h).
5：5G solar spectrum illumination and low solar concentration conditions. Reliability was tested under damp heat conditions (85 °C and 85% humidity for 1000 h).
Data Analysis Methods:
5. Data Analysis Methods: Data analysis included measuring current-voltage characteristics, EQE spectra, and efficiency under various conditions. The bonding interface was characterized using atomic force microscopy (AFM), transmission electron microscope (TEM), and TEM-Energy Dispersive X-ray Spectroscopy (TEM-EDX).
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