研究目的
To enhance the photoresponsivity of a pure graphene photodetector by integrating a metamaterial structure with a broadband high absorption spectrum.
研究成果
The integration of a metamaterial structure into a graphene photodetector significantly enhances its photoresponsivity to nearly 200 mA W?1, which is two orders higher than pure monolayer graphene photodetectors. The device maintains broadband photoresponse, demonstrating potential for applications in photonic integrated circuits.
研究不足
The study focuses on visible light range (475–700 nm) and room temperature conditions. The fabrication process requires skillful manipulation for close contact between metamaterial and graphene.
1：Experimental Design and Method Selection:
The study involves designing a metamaterial structure integrated into a graphene photodetector to enhance its photoresponsivity. The design is based on Finite-difference time-domain (FDTD) simulation to optimize the geometric parameters of the grating for broadband high absorption.
2：Sample Selection and Data Sources:
The samples include a silicon substrate with SiO2 layer and SiO2 grating, graphene layer, and metal electrodes. Data sources include SEM, AFM, and Raman spectroscopy for characterization.
3：List of Experimental Equipment and Materials:
Equipment includes electron beam lithography (EBL), reactive-ion etching (RIE), electronic beam evaporation, and semiconductor device analyzer. Materials include PMMA, Ti, Au, and graphene.
4：Experimental Procedures and Operational Workflow:
The fabrication process involves designing grating patterns, etching silicon oxide, depositing metal layers, transferring graphene, and fabricating electrodes. Photocurrent measurements are performed under varying wavelengths and power intensities.
5：Data Analysis Methods:
The photoresponsivity is calculated from photocurrent measurements under different illumination conditions. The absorption spectrum is analyzed using FDTD simulation and experimental measurements.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容-
WITec alpha300
alpha300
WITec
Characterization of absorption trend spectrum by raman spectroscopy
-
Agilent B1500A
B1500A
Agilent
Collection of electrical characteristics by semiconductor device analyser
-
NKT photonics SuperK Extreme
SuperK Extreme
NKT photonics
Light source for photoresponsivity measurement
-
SuperK Select
SuperK Select
NKT photonics
Tunable wavelength filter based on cousto-op TlcTunable Filters
-
Hitachi SU8020
SU8020
Hitachi
Characterization of morphology and grating size by scanning electron microscopy (SEM)
-
Bruker MultiMode 8
MultiMode 8
Bruker
Characterization of height size by atomic force microscope
-
Nikon ECLIPSE N
ECLIPSE N
Nikon
Microscope objective for focusing laser beam on the device
-
登录查看剩余5件设备及参数对照表
查看全部
