摘要： Metastable materials that lie within the miscibility gaps of their equilibrium phase diagrams, as well as the development of lattice-parameter-engineered virtual substrates, offer means to greatly expand the material platforms available for semiconductor lasers to enable higher performance and an increased span of emission wavelengths. Semiconductor alloy compositions suitable for laser applications are generally constrained by the ability to synthesize either lattice-matched or pseudomorphic strained-layer quantum wells (QWs) on available substrate platforms. This has hindered the accessibility of certain wavelength regions as well as the ability to fully exploit advanced heterostructure design. The ability to synthesize metastable materials that lie within the miscibility gaps of their equilibrium phase diagrams, such as dilute-N and dilute-Bi III/V compounds, offer a pathway to greatly expand the available materials platform for advanced device development. In addition, the ability to engineer the lattice constant of the substrate to produce a designer-specified virtual substrate enables new heterostructure device designs. This presentation will focus on the development of such materials and device implementation using metalorganic chemical vapor deposition (MOCVD).