研究目的
Investigating the novel design of PbSe MWIR detector that incorporates a graphene layer for three possible distinct modes of operation, promising new designs for scaled high performance CMOS integrable MWIR photodetectors.
研究成果
The study demonstrates that the Graphene-PbSe interface can be engineered to operate in three distinct modes (high mobility collector, controllable Schottky barrier based photo-rectifier, and Graphene PhotoFET), promising radical new designs for scaled high performance CMOS integrable MWIR photodetectors.
研究不足
The study is based on simulations and theoretical models, which may not fully capture all real-world conditions and variations.
1：Experimental Design and Method Selection:
Density Functional Theory (DFT) based simulations to investigate the chemistry of the Graphene-PbSe interface.
2：Sample Selection and Data Sources:
Simulated structures of Graphene, PbSe, and hexa-Boron Nitride (hBN) material stacks.
3：List of Experimental Equipment and Materials:
VASP for simulating the bandstructure, density of states and orbital resolution.
4：Experimental Procedures and Operational Workflow:
Setup structures and use built-in relaxation in VASP, then calculate the bandstructure using PAW method with hybrid functionals.
5：Data Analysis Methods:
Analysis of bandstructure, density of states, and orbital resolution for different material stacks.
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