研究目的
To achieve high efficiency in ultrathin Cu(InxGa1?x)Se2 (CIGS) solar cells with a single-gradient band gap profile by optimizing grain size, interface quality, and Ga gradient.
研究成果
The ultrathin CIGS solar cell with a 1.3 μm-thickness-CIGS achieved a highest efficiency of 11.72% without any light trapping and anti-reflecting coating techniques. The ultrathin CIGS solar cell showed a higher open-circuit voltage due to the formation of a back electrical field and had good ability to resist ion bombardment, suggesting its potential application in space devices.
研究不足
The efficiency of ultrathin CIGS was found to be greatly reduced mainly due to the reduced open-circuit voltage (Voc) and short-circuit current density (Jsc) which was attributed to optical loss, back contact recombination and degradation of absorber properties.
1：Experimental Design and Method Selection:
The CIGS solar cell was synthesized via a three-stage co-evaporation method. The substrate temperature was controlled at 300 °C and 550 °C in the first, second, and third stages, respectively.
2：Sample Selection and Data Sources:
The structure of the CIGS solar cell is 'substrate/Mo/CIGS/CdS/ZnO/ITO/Au'. The thickness of the CIGS was controlled by the first-stage deposition time.
3：List of Experimental Equipment and Materials:
Home-made magnetron sputtering equipment for Mo back electrode, home-made five-source co-evaporation system for CIGS absorption layer, Veeco Dektak 150 stylus profilometer, field emission SEM (FESEM, FEI NOVA NANOSEM 450), TEM (JEM-2100F, JEOL Ltd, Japan), X-ray diffraction (XRD) pattern collected in an X’Pert PRO with Cu Kα radiation.
4：Experimental Procedures and Operational Workflow:
The CIGS absorb layer was fabricated by a three-stage co-evaporation method. The CdS buffer layer was deposited by a chemical bath deposition (CBD) method. The high resistive i-ZnO layer and high conductive indium-doped tin oxide (ITO) were deposited by a radio-frequency (RF) magnetron sputtering method.
5：Data Analysis Methods:
The thicknesses of the obtained thin films were measured by a Veeco Dektak 150 stylus profilometer and further determined from the cross-sectional SEM image. The element characterizations were measured by an energy dispersive spectroscopy (EDS), secondary ion mass spectrometry (SIMS), and X-ray fluorescence (XRF).
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