摘要： To investigate the metal oxide thin film application in optoelectronic field via changing its conduction type, the p-n junction with Bi-doped p-type ZnO and n-type MoS2 is fabricated by pulsed laser deposition. In this work, we explore the photovoltaic effect of the ZnO/MoS2 heterostructure, focusing on the function of tuning Bi contents in enhancing the photoelectric conversion efficiency. Doping-Bi ZnO thin film perfectly shows stable p-type semiconductor properties with high carrier concentration (about from 1×1016 to 1×1017 cm-3), high rational mobility (363 cm2/(υs)) and low resistivity (216.7 Ω). In addition, MoS2 clearly exhibits large quantities of nanosheets and distinct vertically standing structure. The power conversion efficiency (PCE) of ZnO:Bix/MoS2 enhances from 0.518 % to 2.430 % along with increasing doping Bi element from 1 % to 7 %, but when doping Bi content reaches 10 %, the PCE decrease 0.552 %. Essentially, the ability of capturing photon-generated carriers in ZnO:Bix film gradually increases as doping Bi content to without excessive doping content. These findings illustrate that this proposed Bi-doped ZnO has potential in promoting the photoelectric conversion efficiency of MoS2 based p-n junction.