研究目的
Investigating the growth, structure, and laser performance of high-concentration Er-doped GSAG crystal to explore its potential as a new-type laser material at 2.8 μm.
研究成果
The Er:GSAG crystal can realize laser output at 2.83 μm with high performance by 962 nm LD pumping. It shows great potential for applications in radiant environments due to its radiation resistance property.
研究不足
The study focuses on the performance of Er:GSAG crystal under specific conditions (e.g., 962 nm LD pumping, gamma-ray irradiation). Further research is needed to explore its performance under a wider range of conditions and applications.
1：Experimental Design and Method Selection:
The Er:GSAG crystal was grown by the Czochralski (Cz) method under nitrogen atmosphere. The crystal quality was determined by XRC, and structure parameters were obtained by X-ray Rietveld refinement.
2：Sample Selection and Data Sources:
Sample disks were cut perpendicularly along the growth direction <111> from post-annealing crystals for spectroscopic experiments. For laser experiments, Er:GSAG crystal samples with dimensions of 2 mm×2 mm×5 mm were used.
3：List of Experimental Equipment and Materials:
A JGD-60 furnace was used for crystal growth. The laser experiment setup included a 962 nm LD, an energy meter (Ophir PE50-DIF-C), and a Pyroelectric Array camera (Ophir-Spiricon PY-Ⅲ-HR).
4：Experimental Procedures and Operational Workflow:
The LD was collimated and focused onto an uncoated Er:GSAG crystal. The crystal was enclosed by a copper heat sink with cooling water passage.
5：Data Analysis Methods:
The absorption cross section was calculated with σabs=α(λ)/Nc. The temperature distribution was simulated using MATLAB.
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