研究目的
Investigating the tuning of photoluminescence emission wavelength over a wider range of optical telecommunication wavelength by employing a GaAs1 ? xSbx capping layer to the strain coupled bilayer InAs quantum dot heterostructures.
研究成果
The study demonstrates that the presence of a GaAs1 ? xSbx capping layer with varying capping thickness and Sb-content significantly affects the strain distribution across the heterostructure, causing a shift in the PL spectra and change in carrier lifetime. The strain coupled bilayer InAs/GaAs1 ? xSbx QDs could be potential candidates for long wavelength light emitters and detectors, beneficial for the modulation of emission wavelength over the entire telecommunication window.
研究不足
The study is limited by the constraints in achieving uniform Sb-content and thickness in the GaAs1 ? xSbx capping layer, which may affect the reproducibility of the results. Additionally, the signal to noise ratio was poor for samples with higher Sb-content at elevated temperatures, limiting the temperature range for reliable measurements.
1：Experimental Design and Method Selection:
The study involves the growth of bilayer InAs quantum dot heterostructures with a GaAs1 ? xSbx capping layer to modulate strain and investigate its effects on photoluminescence emission and carrier lifetime.
2：Sample Selection and Data Sources:
Samples were grown on semi-insulating GaAs (001) substrates using a Veeco Gen 930 Molecular Beam Epitaxy system.
3：List of Experimental Equipment and Materials:
Veeco Gen 930 Molecular Beam Epitaxy system, valved cracker source for As2 and Sb2, cryostat, 532 nm green diode pumped solid-state laser, liquid nitrogen–cooled single-pixel InSb photodetector, transmission electron microscopy (TEM), time correlated single photon counting (TCSPC) setup.
4：Experimental Procedures and Operational Workflow:
The samples were grown with varying Sb-content and thickness of the GaAs1 ? xSbx capping layer. Photoluminescence measurements were conducted at low temperatures, and carrier dynamics were investigated using TRPL measurements.
5：Data Analysis Methods:
The data were analyzed to evaluate the impact of strain modulation on photoluminescence emission wavelength and carrier lifetime.
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