研究目的
The prospect of generalized energy conversion from sunlight demands that solar cells be engineered from stable, sustainable, nontoxic semiconductors based on earth-abundant elements. These requirements have been particularly hard to meet for the light absorbing layer in thin film p-n or p-i-n photovoltaics while maintaining decent performance.
研究成果
The introduction of an ultrathin (1.5 nm) ZnS layer by ALD reduces the undesired dewetting during annealing that occurs with oxide-free Sb2S3 and passivates the surface defects at the interface. Solar cells based on this ZnS/Sb2S3 material system outperform not only their oxygen-containing counterparts but also the ZnS-free devices by approximately 60%. A systematic transient absorption spectroscopy study reveals the limiting nature of recombination at the Sb2S3/P3HT interface.
研究不足
The study focuses on the combination of oxide and heavier chalcogenide layers in thin film photovoltaics, addressing limitations such as oxygen incorporation and sulfur deficiency. The research is limited to the materials and methods described, and potential areas for optimization include the interface engineering and the thickness of the Sb2S3 layer.
