研究目的
Investigating the effects of 14-MeV neutron displacement damage on waveguide-integrated germanium-on-silicon p-i-n photodiodes for silicon photonics.
研究成果
The study found that waveguide-integrated germanium-on-silicon p-i-n photodiodes are susceptible to displacement damage-induced carrier removal effects but continue to operate without meaningful impact to performance at the dose levels examined. The devices demonstrated resilience in dark current, responsivity, and frequency response, indicating suitability for use in radiation environments such as space.
研究不足
The work does not examine the short-term annealing or transient behavior of the displacement damage, focusing only on lasting effects after room temperature annealing. The study is limited to the effects of 14-MeV neutron displacement damage and does not cover other types of radiation or damage mechanisms.
1：Experimental Design and Method Selection:
The study involved irradiating waveguide-integrated germanium-on-silicon p-i-n photodiodes with 14-MeV neutrons to investigate displacement damage effects. Measurements included dark current-voltage characteristics, PD junction capacitance, spectral response, and frequency response.
2：Sample Selection and Data Sources:
Three chips were irradiated to different fluences, with another group serving as a control. Measurements were taken before and after irradiation.
3：List of Experimental Equipment and Materials:
Equipment included a Keithley 2400 source-measurement-unit, Keysight E8361C precision network analyzer, and a Lake Shore Cryotronics MTD-150 close-cycled characterization system.
4：Experimental Procedures and Operational Workflow:
Devices were irradiated in an unbiased state, followed by a period of room temperature annealing before characterization. Measurements were conducted across a range of temperatures and biases.
5：Data Analysis Methods:
Data analysis included fitting models to measured data to extract parameters such as junction capacitance and ideality factor, and comparing pre- and post-irradiation performance metrics.
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Keithley 2400
2400
Keithley
Source-measurement-unit for dark current-voltage measurements.
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Keysight E8361C
E8361C
Keysight
Precision network analyzer for scattering parameter measurements.
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Lake Shore Cryotronics MTD-150
MTD-150
Lake Shore Cryotronics
Close-cycled characterization system for temperature-dependent measurements.
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Agilent 4156C
4156C
Agilent
Precision Semiconductor Parameter Analyzer for low current measurements.
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Keysight 81609A
81609A
Keysight
Step-tunable laser source for spectral response measurements.
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Keysight N9030A
N9030A
Keysight
Electrical spectrum analyzer for frequency response measurements.
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