研究目的
Investigating the high-temperature optical characteristics of GaN-based LEDs for their potential integration as optocoupler emitters in high-density power electronic modules.
研究成果
The study demonstrates that InGaN/GaN MQW LEDs exhibit stable operation and high IQE at elevated temperatures, making them suitable candidates for integration into high-temperature optocouplers in power electronic modules. The presence of a GaN buffer layer and superlattice EBL structure enhances the peak IQE, while the pre-MQW layer has a minimal effect.
研究不足
The study is limited to the analysis of commercially available LED samples with specific peak wavelengths. The structural differences across the LED samples may affect the generalizability of the findings.
1：Experimental Design and Method Selection:
The study employs the temperature- and intensity-dependent electroluminescence (T-IDEL) measurement technique to analyze the internal quantum efficiency (IQE) of InGaN/GaN MQW LEDs.
2：Sample Selection and Data Sources:
Three commercially available LED samples with peak wavelengths of 448nm, 467 nm, and 515nm are selected.
3：List of Experimental Equipment and Materials:
High-temperature measurements are conducted using a Janis ST-100 cryostat, and electroluminescence spectra are collected using a Horiba 550 spectrometer integrated with a photomultiplier tube (PMT).
4：Experimental Procedures and Operational Workflow:
The LEDs are subjected to varying temperatures and current densities to study their IQE and operational stability.
5：Data Analysis Methods:
The ABC model is used to fit the experimental data and extract the IQE as a function of injected current density.
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