研究目的
To overcome the issue of photoluminescent (PL)-quenching behavior of silicon vacancy (SiV) centers in CVD-deposited nanodiamond particles or films by employing air annealing of nanocrystalline diamond (NCD) films with uniform doping of Si atoms to improve the PL emission efficiency of SiV centers.
研究成果
The thermal treatment of Si-doped NCD films in air significantly enhances the PL intensity of SiV centers, with a maximum enhancement of about 1473 fold achieved at 700 oC for 20 min. This enhancement is attributed to the transition of the diamond surface from hydrogen to oxygen termination and the optimized crystalline quality of the annealed films. A schematic model based on surface band bending theory elucidates the mechanism of the SiV PL enhancement in oxygen-terminated NCD films.
研究不足
The study is limited to the effects of air annealing on the PL emission of SiV centers in NCD films. The potential effects of other annealing environments or doping methods were not explored. Additionally, the study focuses on the PL emission at 738 nm, and other wavelengths or color centers were not considered.
1：Experimental Design and Method Selection:
Air annealing of nanocrystalline diamond (NCD) films with uniform doping of Si atoms was employed to improve the PL emission efficiency of SiV centers. The annealing was conducted at temperatures ranging from 500 to 700 oC for different durations.
2：Sample Selection and Data Sources:
Si-doped NCD films were prepared on (100) Si substrates in a 915MHz microwave plasma CVD reactor.
3：List of Experimental Equipment and Materials:
A 915MHz microwave plasma CVD reactor (MPCVD, Iplas, Cyrannus), scanning electron microscopy (SEM, Hitachi Su-70), atomic force microscopy (AFM, Bruker Innova), Raman spectroscopy (LabRAM HR Evolution, Horiba), X-ray photoelectron spectroscopy (XPS), and high-resolution transmission electron microscopy (HRTEM, FEI G2 F20).
4：0). Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The as-deposited samples were annealed in air at different temperatures and times. The microstructures and PL spectra of the samples were characterized.
5：Data Analysis Methods:
The PL spectra were analyzed to determine the enhancement in SiV PL emission. The crystalline quality and surface chemistry of the films were analyzed using HRTEM, Raman, and XPS measurements.
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