研究目的
Investigating the performance of Ge nanowire (NW) metal-semiconductor-metal (MSM) photodetectors fabricated by Ge condensation method, focusing on achieving high specific detectivity and low dark current.
研究成果
The Ge NW MSM photodetectors fabricated by Ge condensation method demonstrated high specific detectivity and low dark current, attributed to the photogating effect from electron traps at the interface states. The scalable and CMOS-compatible process suggests potential for low-cost, high-performance near-infrared photodetectors.
研究不足
The study focuses on Ge NW photodetectors fabricated by a specific method (Ge condensation), and the performance may vary with other fabrication techniques. The scalability and integration of these photodetectors into practical applications require further investigation.
1：Experimental Design and Method Selection:
The study involved the fabrication of Ge NW MSM photodetectors using 3D Ge condensation technique, with various sizes of Ge NWs designed to investigate the effect of NW width on photodetector performance.
2：Sample Selection and Data Sources:
Ge NWs were fabricated from SiGe on insulator with high crystal quality, controllable size and position.
3：List of Experimental Equipment and Materials:
Equipment included e-beam lithography (EBL), reactive ion etching (RIE), and a Keithley 2611B for electrical measurements. Materials included SiGe on insulator substrates and aluminum for electrodes.
4：Experimental Procedures and Operational Workflow:
The process involved patterning SiGe stripes, oxidation and annealing to form Ge NWs, followed by electrode deposition and electrical and optical characterization.
5：Data Analysis Methods:
The performance of the photodetectors was analyzed in terms of responsivity, gain, and specific detectivity, with mechanisms explained through photogating effect and electron trapping at interface states.
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