研究目的
To review recent experimental investigations and model developments to analyze and describe in detail the oxidation process of III-V semiconductors, focusing on controlling the shape and size of optical/electrical apertures for photonic devices.
研究成果
The paper concludes that the lateral oxidation of Al-containing III-V semiconductors can be controlled by selecting appropriate oxidation operating conditions to reduce anisotropy. It also demonstrates that any remaining anisotropy can be compensated for by pre-distorting the mesa shape to achieve desired oxide aperture contours, such as circular shapes for singlemode VCSELs.
研究不足
The study acknowledges the challenge of controlling the oxidation process with high accuracy and reliability, especially for thin and thick layers. The inverse problem of defining the to-be-etched mesa to achieve a specific oxidation contour is complex and may not always have a strict solution.
