研究目的
Investigating the controlled etching of silica nanospheres monolayer for template application, focusing on the restructuring of SNs geometry at two-particle level and its application in growing silicon nanowires.
研究成果
The study successfully demonstrated a controlled etching process for restructuring silica nanospheres monolayers into non-close-packed structures, applicable as templates for silicon nanowire growth. The geometrical model provided quantitative estimates of neck parameters, offering a handle on the final morphology for industrial applications.
研究不足
The resolution of FESEM limits the estimation of particle radius at later stages of sintering. The process requires precise control over etching time and etchant concentration to achieve desired morphological changes.
1：Experimental Design and Method Selection:
A three-step spin coating method was used to self-assemble SNs of different sizes (140 nm, 170 nm, and 220 nm) into a close-packed monolayer on a silicon substrate, followed by sintering at 950oC and etching with buffered oxide etch (BOE) of various concentrations.
2：Sample Selection and Data Sources:
SNs were synthesized by sol-gel waterless Stober’s method, and the monolayer was characterized using FESEM and AFM.
3：List of Experimental Equipment and Materials:
FESEM (Zeiss Ultra 55), AFM (Nanoscope Multimode
4：0, Bruker Corporation), and BOE (
1 volume ratio of NH4F 40 wt % – HF 49 wt %).
5：Experimental Procedures and Operational Workflow:
The monolayer was sintered, then etched with BOE at various concentrations and time intervals, and the morphological changes were monitored.
6：Data Analysis Methods:
Image processing software ImageJ was used to measure neck parameters, and a geometrical model was developed to quantify the etching process.
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