摘要： Graphene quantum dots (GQDs) are grown on the copper foil substrate by the chemical vapor deposition (CVD) synthesis. 1–3 wet transfer numbers are then used in the preparations of the GQDs/glass substrate in order to improve the density and uniformity of GQDs via the stacking of multiple layers. The CH4 input time, ?ow rate, and the number of wet transfer are determined to obtain the optimum conditions in electrical (resistivity) and optical (transmittance) properties. The multilayered graphene is characteristically close to the graphite-like material. The G-band peak intensity in Raman analyses is varied proportional to the density of GQDs. Increasing the wet transfer number can lead to increases in the mean diameter of GQDs and the amount of oxygen vacancies, thus resulting in the rise of carrier concentration and the lowering of carrier mobility. The resistivity varying with the wet transfer number is inversely proportional to the density of GQDs. A bandgap reduction can bring in the lowerings of photoluminescence peak intensities. The specimen with 2 wet transfers has the lowest resistivity and the second highest transmittance of these specimens. GQDs can bring in a signi?cant reduction of resistivity compared to the same substrate without GQD.