研究目的
Investigating the suitability of amorphous silicon nitride as a passivation layer in thin film aSi:H solar cells.
研究成果
The study concludes that amorphous silicon nitride is an excellent candidate for forming passivation layers in thin film solar cells, significantly improving the short circuit current density and conversion efficiency. The optimal performance was achieved with a passivation layer having an optical band gap of 4 eV or more and a thickness of 20 nm.
研究不足
The study is limited to the characterization of amorphous silicon nitride layers and their application as passivation layers in thin film solar cells. The electrical characterization showed that despite heavy doping, the material did not exhibit conductivity, limiting its application to passivation layers only.
1：Experimental Design and Method Selection:
The study involves the fabrication of amorphous silicon nitride layers using PECVD procedure and their characterization through optical, material, and electrical methods.
2：Sample Selection and Data Sources:
Samples were fabricated on Corning eagle XG glass substrates, with varying nitrogen content.
3：List of Experimental Equipment and Materials:
PECVD reactor (Oxford Plasmalab System 100), Shimadzu UV-3600 UV-VIS NIR spectrophotometer, Ultra 55-SEM system, Helium probe station-Lakeshore-CRX-VF.
4：Experimental Procedures and Operational Workflow:
The substrates were cleaned and then subjected to PECVD deposition. The samples were then characterized for optical properties, material composition, and electrical properties.
5：Data Analysis Methods:
The optical band gap was determined from absorption spectra, material composition was analyzed using FTIR and EDS, and electrical properties were measured using a probe station.
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