研究目的
Investigating the origin of open-circuit voltage losses in perovskite solar cells through surface photovoltage measurement to understand the complex optoelectronic processes related to charge carrier generation, transport, extraction, and their loss mechanisms.
研究成果
The study reveals that the open-circuit voltage (Voc) losses in perovskite solar cells are significantly influenced by the accumulation of positive charges at the interfaces between the perovskite layer and the charge transport layers. In inverted devices with PEDOT:PSS, hole accumulation leads to recombination and Voc loss, whereas in conventional devices with TiO2, positive charge accumulation modifies interfacial band bending, enhancing Voc. These findings underscore the importance of interfacial engineering in perovskite solar cells to minimize Voc losses and improve device performance.
研究不足
The study focuses on methylammonium lead iodide (MAPI) based solar cells and may not directly apply to other perovskite compositions. The thickness-dependent effects observed may vary with different fabrication methods or underlayers. The SPV measurements, while insightful, may not capture all dynamic processes occurring in complete devices under operational conditions.
1：Experimental Design and Method Selection:
The study utilized thickness-dependent surface photovoltage (SPV) measurements and device performance analysis to investigate the origin of Voc losses in perovskite solar cells.
2：Sample Selection and Data Sources:
Methylammonium lead iodide (MAPI) perovskite layers with thicknesses ranging from 50 nm to 230 nm were prepared on different underlayers (ITO, PEDOT:PSS, and TiO2).
3：2). List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Instruments included a Keithley 236 Source Measure Unit, a solar simulator with AM
4：5G filters, Shimadzu UV-2600 UV-Vis spectrophotometer, PANalytical X’Pert Diffractometer, Gemini LEO 1525 scanning electron microscopy, Park NX10 AFM, and an APS04 system for APS and SPV measurements. Experimental Procedures and Operational Workflow:
The perovskite layers were characterized by XRD, AFM, SEM, and APS to ensure consistent crystallinity and morphology. SPV measurements were performed under white light illumination to monitor changes in surface potential.
5：Data Analysis Methods:
The SPV values were correlated with device performance to identify the origin of Voc changes. The data were analyzed to understand the charge carrier recombination and accumulation at interfaces.
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