研究目的
The aim of the study is to improve the photoresponse characteristics (Ion/Ioff-ratio) of fabricated diode by doping with La at different ratios to ZnO thin films.
研究成果
The fabricated Al/p-Si/La:ZnO/Al diodes exhibited high photoresponse properties, with the 0.5 wt.% La-doped ZnO device showing the highest photoresponse. These devices can be effectively used in optoelectronic applications such as photodetectors.
研究不足
The study does not discuss the long-term stability of the fabricated devices under continuous operation or their performance under extreme environmental conditions.
1：Experimental Design and Method Selection:
The study utilized the sol–gel technique for fabricating La-doped ZnO thin films with different La concentrations. The spin coating method was employed to deposit the films on glass and p-Si substrates.
2：Sample Selection and Data Sources:
The samples were prepared with varying La concentrations (
3：1, 5, 2, and 4 wt.%) to investigate their effects on the photodetector's performance. List of Experimental Equipment and Materials:
Zinc acetate dehydrate, 2-methoxy ethanol, lanthanum nitrate hexahydrate, mono ethanolamine, glass substrates, p-Si substrates, and Al for contacts were used.
4：Experimental Procedures and Operational Workflow:
The solutions were stirred and heated, then deposited on substrates via spin coating, followed by annealing. Al contacts were formed using thermal evaporation.
5：Data Analysis Methods:
I–V and C/G–V characteristics were measured under dark and different illumination conditions to analyze the devices' electrical and photoresponse properties.
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