研究目的
Demonstrating a microring-type magneto-optical (MO) switch with a-Si:H waveguides on a garnet substrate to achieve an extinction ratio of 9 dB by controlling the direction of the external current induced magnetic field.
研究成果
The study successfully demonstrated an MO switch with a-Si:H MRR on Ce:YIG, achieving switching extinction ratios of ~9 dB and ~6 dB for through and drop ports, respectively. Temporal response measurements indicated potential for GHz switching speeds with optimized electrode design.
研究不足
The difference between simulated and measured NPS values due to fabrication errors and temperature-dependent reduction of the Faraday rotation coefficient of Ce:YIG. The electrode design was not optimized for high-frequency modulation, limiting the effective current application.
1：Experimental Design and Method Selection:
The study involves the design and fabrication of an a-Si:H MO microring switch on a Ce:YIG substrate, utilizing FEM simulations for waveguide design and NPS calculations.
2：Sample Selection and Data Sources:
A 500-nm-thick Ce:YIG was grown on a SGGG substrate, followed by the deposition of a 220-nm-thick a-Si:H layer.
3：List of Experimental Equipment and Materials:
Equipment includes PE-CVD for deposition, electron beam lithography and reactive ion etching for waveguide formation, and electron beam vapor deposition for metal strip formation. Materials include Ce:YIG, SGGG substrate, a-Si:H, SiO2, and Cr/Au.
4：Experimental Procedures and Operational Workflow:
Fabrication involved waveguide formation, SiO2 over cladding layer deposition, and metal strip formation. Transmission spectra were measured under varying magnetic field directions.
5：Data Analysis Methods:
NPS was calculated from the resonant wavelength shifts and FSR of the MRR.
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