研究目的
Investigating the effect of bottom grooved furnace upon the directional solidification (DS) process of multi-crystalline silicon (mc-Si) for photovoltaic applications.
研究成果
The convex shape of the c-m interface is obtained from a modified heat exchanger block. The thermal stress and dislocation density in grown mc-Si are less than in conventional system. Higher radial bottom grooved heat exchanger block reduces the dislocation density and von Mises stress, which can be used for growing good quality mc-Si ingots for PV applications.
研究不足
The numerical simulation assumed geometry is perfect 2D axis-symmetry, which may not fully capture all complexities of the actual process.
1：Experimental Design and Method Selection:
A transient global model was used to investigate the effect of bottom grooved furnace upon the directional solidification (DS) process of multi-crystalline silicon (mc-Si). The numerical simulation assumed geometry is perfect 2D axis-symmetry.
2：Sample Selection and Data Sources:
The simulation was performed by the finite volume method in 2D axisymmetric model.
3：List of Experimental Equipment and Materials:
The modified heat exchanger block system was used for controlling the temperature gradient at the bottom of the crucible.
4：Experimental Procedures and Operational Workflow:
The temperature distribution, crystal-melt (c-m) interface, thermal stress and dislocation density have been simulated.
5：Data Analysis Methods:
The simulation results indicate that the dislocation density reduces in peripheral region of the ingot as compared to central portion of ingot.
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