摘要： Light-emitting diodes based on quantum dots (QD-LEDs) have attracted much attention not only due to their usage in lighting and display applications but also as the light sources in visible light communication (VLC). One of the most important parameters of a QD-LED as a light source is the improvement of modulation bandwidth in order to increase the data transfer rate. Here, three sets of QD-LEDs are presented for which some parameters such as frequency response are investigated, once for the devices with similar structure but different homogeneities and then for those with minor changes in the structure. It was found that by changing the homogeneity of QDs in the same structure based on CdSe/ZnS and using the ZnO shell instead of ZnS, the modulation bandwidth varied between 2 and 8 MHz. Furthermore, for the structure based on CdSe/ZnS, the modulation bandwidth of 8 MHz is achieved which is fairly a wide bandwidth for a QD-LED. The idea of manipulation in the structure of nanomaterials can be an important step toward increasing the modulation bandwidth. According to calculated results, the carrier density in different layers is calculated and then the recombination current-voltage characteristics are compared with the experimental results, indicating high conformity.