研究目的
Investigating the internal physical processes that cause the low energy efficiency of GaN-based superluminescent light-emitting diodes (SLEDs).
研究成果
The wall-plug efficiency of GaN-based SLEDs is severely limited by the low conductivity of p-doped waveguide layers and suffers more than laser diodes from carrier recombination losses, particularly Auger recombination, which are strongly enhanced by self-heating. Possible remedies for these limitations will be discussed at the conference.
研究不足
The comparison does not include any SLED design optimization for maximum WPE, such as increasing the cavity length. The study is limited to a violet emission wavelength of 405nm, and challenges associated with longer wavelengths in the blue and green spectral region are noted but not fully explored.
1：Experimental Design and Method Selection:
Advanced numerical device simulation is utilized to investigate the internal physical processes affecting SLED efficiency. The same model and parameters as in a recent simulation of 405nm InGaN/GaN laser diodes are employed for comparison.
2：Sample Selection and Data Sources:
The study focuses on GaN-based SLEDs and compares them with laser diodes using numerical simulations.
3：List of Experimental Equipment and Materials:
Numerical simulation software (PICS3D by Crosslight Software Inc.) is used.
4：Experimental Procedures and Operational Workflow:
The simulation involves reducing the front facet reflectivity to transform a laser diode model into a SLED model, then analyzing the output power, bias, and efficiencies under continuous-wave operation at room temperature.
5：Data Analysis Methods:
The wall-plug efficiency (WPE) is split into internal quantum efficiency (IQE), light extraction efficiency (EXE), and electrical efficiency (ELE) to compare the two device types.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
