研究目的
Investigating the performance of Si-based GeSn mid-infrared photodetectors for imaging applications.
研究成果
High-performance GeSn photodetectors were demonstrated with Sn compositions up to 22.3%, extending the cut-off wavelength to 3.65 μm. The passivation technique effectively reduced the dark current and enhanced the responsivity and spectral D*. Mid-IR imaging was successfully demonstrated, showing comparable quality to commercial PbSe detectors.
研究不足
The study is limited by the technical constraints of the GeSn material growth and device fabrication processes, as well as the operational temperature range of the photodetectors.
1：Experimental Design and Method Selection:
The study involved the demonstration of GeSn photoconductors and photodiodes with varying Sn compositions. The methodology included material growth, device fabrication, and characterization techniques such as PL measurements, spectral response analysis, and dark current mechanism analysis.
2：Sample Selection and Data Sources:
GeSn samples were grown using an industrial standard ASM Epsilon? 2000 Plus reduced pressure chemical vapor deposition reactor. Samples were characterized using SIMS, TEM, and XRD.
3：List of Experimental Equipment and Materials:
ASM Epsilon? 2000 Plus RPCVD system, TEM, SIMS, XRD, FTIR spectrometer, InSb detector.
4：Experimental Procedures and Operational Workflow:
The GeSn samples were fabricated into photoconductor and photodiode devices. Spectral responses were characterized using an FTIR spectrometer. PL measurements were performed using a 532-nm CW laser.
5：Data Analysis Methods:
The spectral D* was determined using NEP at 1Hz frequency bandwidth and device area. Dark current-voltage characteristics were analyzed to understand the effect of passivation.
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