研究目的
Investigating the effects of metal-assisted chemical etching (MACE) time on properties of black silicon wafers for applications in optoelectronic devices.
研究成果
The study successfully demonstrated that needle-like nanostructures on pyramidal surfaces of c-Si, prepared by MACE, can achieve low reflectance and low surface recombination rates when passivated with a SiNx/Al2O3 stacked layer. The optimal MACE time was found to be 3 minutes, resulting in nanostructures less than 300 nm in height, a reflectance of 1.4%, and a surface recombination rate of 43.6 cm/s. This approach shows great potential for improving the efficiency of crystalline silicon solar cells.
研究不足
The study is limited by the technical constraints of the MACE process and the challenges in achieving uniform passivation coverage on nanostructured surfaces. Potential areas for optimization include improving the conformity of passivation layer deposition and further reducing surface recombination rates.
1：Experimental Design and Method Selection:
The study involved a two-step etching process on crystalline silicon wafers, starting with alkaline etching to form pyramidal surfaces, followed by MACE to create needle-like nanostructures. The MACE time was varied to study its effects on the wafers' properties.
2：Sample Selection and Data Sources:
Boron-doped crystalline silicon wafers with a thickness of 200 μm and a resistivity of 1 ?-cm were used as substrates.
3：List of Experimental Equipment and Materials:
Equipment included a spatial ALD system for Al2O3 deposition, ICPCVD for SiNx deposition, SEM for morphology observation, UV-visible spectrometer for reflectance measurement, and a lifetime tester for minority carrier lifetime measurement.
4：Experimental Procedures and Operational Workflow:
The wafers were first etched in an alkaline solution, then subjected to MACE with varying times. After etching, the wafers were cleaned and passivated with Al2O3 and SiNx layers. The properties of the wafers were then characterized.
5：Data Analysis Methods:
The reflectance and passivation quality of the black silicon wafers were analyzed based on the measurements obtained from the UV-visible spectrometer and lifetime tester.
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