摘要： All-inorganic quantum dot light-emitting diodes (QLEDs) show promise for advanced lighting and display due to their superior advantage in stability. However, all-inorganic QLEDs suffer from the low efficiency because of the exciton quenching and inefficient hole transport from inorganic hole transport layer (HTL) to QDs. Herein, we demonstrate an efficient all-inorganic QLED with NiO nanoparticals (NPs) HTL modified by 11-mercaptoundecanoic acid (MUA). The MUA can passivate the defects of NiO and suppress the exciton quenching. Moreover, the declined valance band level of modified NiO could facilitate the hole transport, promoting the charge balance. In addition, the surface engineering improves the quality of NiO film, leading to the decrease of current leakage. As a result, the maximum current efficiency and external quantum efficiency (EQE) of our QLEDs achieve 5.50 cd/A and 1.28%, respectively, exhibiting the enhancement of 4.5 and 1.72 folds, respectively. Meanwhile, the stability of the device is drastically improved by more than 20 folds after modifying the NiO with MUA. The strategy offers a pathway to enhance the efficiency and the operation lifetime of all-inorganic QLEDs.