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Deposition of p-type Al doped PbS thin films for heterostructure solar cell device using feasible nebulizer spray pyrolysis technique

DOI:10.1016/j.physb.2019.411704 期刊:Physica B: Condensed Matter 出版年份:2019 更新时间:2025-09-19 17:13:59
摘要: Doping of metal atoms with PbS thin films can make significant influence on the structural and electron transport properties which makes it suitable for photovoltaic and other device applications. The objective of the present work is to study the structural, morphological, optical and electrical properties of PbS:Al thin films as a function of different Al doping percentage. PbS and Al doped PbS thin films were deposited using Nebulizer Spray Pyrolysis (NSP) on soda lime glass substrates by varying Al doping level from 0 wt% to 8 wt%. Polycrystalline nature with face centered cubic crystal structure was noticed for all the prepared films from XRD pattern. The orientation along (200) plane was observed for all the prepared films. From AFM analysis, the observed surface roughness values were considerably decreased on increasing the Al doping concentration. The calculated optical band gap values exhibits increasing trend and shifted from 1.54 eV to 1.66 eV on increasing Al doping concentration. The electrical resistivity value of the PbS:Al thin films were reduced from 3.08 ? 103 to 1.63 ? 103 Ωcm with raise in Al doping level. The solar cell efficiency for FTO/n-CdS/p-PbS:Al structure constructed from 6% of Al doped PbS film was about 0.44%.
作者: S. Rex Rosario,I. Kulandaisamy,K. Deva Arun Kumar,A.M.S. Arulanantham,S. Valanarasu,Maha A. Youssef,Nasser S. Awwad
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The objective of the present work is to study the structural, morphological, optical and electrical properties of PbS:Al thin films as a function of different Al doping percentage.

Device quality PbS:Al thin films were prepared via NSP technique. The successful incorporation of Al ions in the PbS system was confirmed through XRD and EDS. The study found that the increase in Al doping concentration leads to substantial increase in band gap, which may help to enhance the efficiency of the PV cell. The optimized Al doping level (6 wt%) on PbS thin film was employed for the heterostructure device fabrication, which exhibited a solar cell efficiency value of 0.44%. The work provides a foundation for future improvements in heterostructure conversion efficiency through proper understanding and optimization of deposition parameters and materials.

The solar cell efficiency of the fabricated heterostructure device is low (0.44%), which may be due to the disturbance of electron hole pair transition between the prepared p-type PbS and n-type CdS structure. The efficiency can be improved in future by changing the deposition parameters, using a different n-type window layer instead of CdS, and optimizing the front and back electrodes.

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