研究目的
To demonstrate an ultrahigh performance ε-Ga2O3 metal-semiconductor-metal (MSM) solar-blind photodetector (SBPD) and investigate its gain mechanism.
研究成果
The fabricated MSM ε-Ga2O3 SBPD exhibits ultrahigh performance, including a record high responsivity of 230 A/W, ultrahigh detectivity of 1.2×1015 Jones, and a fast recovery speed of 24 ms. The gain mechanism is attributed to the Schottky barrier lowering effect due to defect states at the metal-semiconductor interface or in the bulk Ga2O3. These results suggest that ε-Ga2O3 has potential for future solar-blind photosensing and imaging applications.
研究不足
The study focuses on the ε-Ga2O3 phase, and other phases of Ga2O3 are less explored. The performance of the photodetector may be influenced by the quality of the ε-Ga2O3 film and the fabrication process.
1：Experimental Design and Method Selection:
The MSM ε-Ga2O3 SBPD was fabricated based on MOCVD-grown ε-Ga2O3 epitaxial film on sapphire substrate. The interdigital electrodes consisted of Ti/Au with thicknesses of 20/50 nm and were deposited via electron beam evaporation.
2：Sample Selection and Data Sources:
The ε-Ga2O3 film was grown by MOCVD, and the device's performance was characterized using a semiconductor parameter system (4200SCS, Keithley) and a Zolix DSR-OS-X150A-ZKDDZ automated spectra radiometric measurement system.
3：List of Experimental Equipment and Materials:
The cathodoluminescence spectrum was obtained by the Schottky field emission scanning electron microscope (SIRION200). A Tanon UV-100 lamp was employed to get the 254 nm and 365 nm monochromatic lights. LH-126C and OPHIR NOVA Ⅱ were used to measure the optical power.
4：0). A Tanon UV-100 lamp was employed to get the 254 nm and 365 nm monochromatic lights. LH-126C and OPHIR NOVA Ⅱ were used to measure the optical power. Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The device fabrication involved depositing ε-Ga2O3 film by MOCVD, followed by the deposition of Ti/Au interdigital electrodes via electron beam evaporation. The electric properties were examined under dark and illuminated conditions at various temperatures.
5：Data Analysis Methods:
The current transport mechanism was analyzed using thermionic field emission and Poole-Frenkel emission models. The gain mechanism was investigated based on the Schottky barrier lowering effect due to defect states at the metal-semiconductor interface or in the bulk Ga2O3.
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