研究目的
Demonstrating flexible solar blind Ga2O3 ultraviolet photodetectors with high responsivity and photo-to-dark current ratio.
研究成果
The amorphous Ga2O3 films were successfully grown on a flexible PI substrate by RF magnetron sputtering at different growth temperatures. The flexible photodetectors exhibit good durability and stability at all growth temperatures and have the largest photo-to-dark current ratio (>105), responsivity (52.6 A/W), and external quantum efficiency (2.6×10 4 %) at 200 oC.
研究不足
The films grown under the low growth temperature range (50 oC to 200 oC) are amorphous, which may limit the performance of the photodetectors. The flexible device can exhibit stable electrical characteristics only within a certain bending range.
1：Experimental Design and Method Selection:
Ga2O3 films were grown by radio frequency magnetron sputtering technique on flexible PI substrates under different growth temperatures (50-200 oC).
2：Sample Selection and Data Sources:
Ga2O3 films were deposited on PI and sapphire substrates. The substrates were ultrasonically cleaned in acetone, alcohol, and deionized water.
3：List of Experimental Equipment and Materials:
RF magnetron sputtering system, Ga2O3 ceramic target (99.99% purity), PI and sapphire substrates, Dual-beam UV-Vis spectrometer, X-ray diffractometer, X-ray photoelectron spectroscopy, FE-SEM, Keithley 4200 semiconductor parameter analyzer.
4：99% purity), PI and sapphire substrates, Dual-beam UV-Vis spectrometer, X-ray diffractometer, X-ray photoelectron spectroscopy, FE-SEM, Keithley 4200 semiconductor parameter analyzer.
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The films were deposited under pure argon atmosphere with a flow rate of 20 sccm. The sputtering power was set to 120 W and the deposited pressure was 25 mTorr. The film thickness was kept at 200 nm.
5：Data Analysis Methods:
Optical transmittance was characterized by UV-Vis spectrometer. The crystal structure was illustrated by X-ray diffractometer. The elemental composition was studied by X-ray photoelectron spectroscopy. The surface morphologies were analyzed using FE-SEM. The electrical characterizations were measured by Keithley 4200 semiconductor parameter analyzer.
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