研究目的
Investigating the effect of background atmosphere and substrate temperature on SrO:Bi3+ (0.2 mol%) thin films produced using pulsed laser deposition with different lasers.
研究成果
The study concluded that the microstructure and photoluminescence of SrO:Bi3+ (0.2 mol%) thin films are highly dependent on the background atmosphere and substrate temperature. Films deposited in O2 showed improved crystallinity and luminescence properties compared to those deposited in vacuum. The optimal balance between substrate temperature and background gas pressure was found at 200 °C in O2.
研究不足
The study is limited by the specific conditions of the PLD process, including the range of substrate temperatures and oxygen pressures tested. The effect of other deposition parameters or different substrate materials was not explored.
1:Experimental Design and Method Selection:
The study used pulsed laser deposition (PLD) to grow SrO:Bi3+ (
2:2 mol%) phosphor thin films on Si (100) substrates in vacuum and different O2 atmospheres at various substrate temperatures using different lasers (Nd:
YAG, KrF, ArF).
3:Sample Selection and Data Sources:
SrO:Bi3+ (0.2 mol%) powder was prepared by the metal nitrate sol-gel combustion synthesis technique. Si (100) wafers were used as substrates.
4:2 mol%) powder was prepared by the metal nitrate sol-gel combustion synthesis technique. Si (100) wafers were used as substrates. List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment included a Nd:YAG laser (266 nm), KrF laser (248 nm), ArF laser (193 nm), Bruker D8 Advance diffractometer, Shimadzu SPM-9600 AFM, JEOL JSM-7800F SEM, He-Cd laser PL system, Gatan MonoCL4 accessory, and Ion ToF SIMS.
5:Experimental Procedures and Operational Workflow:
The deposition chamber was evacuated to a base pressure and then backfilled with O2 to specific pressures. The target was ablated using different lasers at various substrate temperatures, frequencies, and energies. The films were characterized using XRD, AFM, SEM, PL, CL, and ToF SIMS.
6:Data Analysis Methods:
XRD analysis for crystallinity, AFM for surface morphology and roughness, SEM for sample morphology, PL and CL for luminescence properties, and ToF SIMS for elemental distribution.
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Nd:YAG laser
266 nm
Used for pulsed laser deposition of thin films.
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KrF laser
248 nm
Used for pulsed laser deposition of thin films.
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ArF laser
193 nm
Used for pulsed laser deposition of thin films.
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Bruker D8 Advance diffractometer
Bruker
Used for X-ray diffraction analysis.
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Shimadzu SPM-9600
Shimadzu
Atomic force microscopy for studying surface morphology and roughness.
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JEOL JSM-7800F
JEOL
Scanning electron microscope for sample morphology characterization.
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He-Cd laser PL system
Used for collecting photoluminescence spectra.
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Gatan MonoCL4
Gatan
Accessory for measuring cathodoluminescence emission spectra.
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Ion ToF SIMS
Ion ToF
Used for time of flight secondary ion mass spectroscopy measurements.
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