1：Experimental Design and Method Selection:

The study involved the fabrication and characterization of microdisk lasers with two types of active regions: InGaAsN/GaAs quantum wells and InAs/InGaAs/GaAs quantum dots. The lasers were investigated under pulsed pumping with a pulse duration of 200 ns and pulse repetition rate of 100 kHz at room temperature.

2：Sample Selection and Data Sources:

Heterostructures were synthesized by molecular-beam epitaxy on n+-GaAs(100) substrates. Microdisk cavities were formed using plasma etching through a waveguide layer.

3：List of Experimental Equipment and Materials:

A source with plasma nitrogen activation was applied for growth of the nitrogen-containing structure. The active structure region consisted of three strained Ga0.7In0.3N0.02As0.98 QWs separated by two GaAs spacer layers 10 nm in thickness and placed into an undoped wave-guide GaAs layer 0.4 μ m in thickness.

4：7In3N02As98 QWs separated by two GaAs spacer layers 10 nm in thickness and placed into an undoped wave-guide GaAs layer 4 μ m in thickness. Experimental Procedures and Operational Workflow:

4. Experimental Procedures and Operational Workflow: Microlasers were investigated under pulsed pumping. Radiation was collected using a Mitutoyo M Plan Apo NIR 50X microobjective with a numerical aperture of 0.42 which provides a collection angle of about 50°. The collected radiation was introduced into the optical fiber through an adapter and then entered a Yokogawa AQ6370C optical spectral analyzer operating in the wavelength range of 600–1700 nm.

5：42 which provides a collection angle of about 50°. The collected radiation was introduced into the optical fiber through an adapter and then entered a Yokogawa AQ6370C optical spectral analyzer operating in the wavelength range of 600–1700 nm. Data Analysis Methods:

5. Data Analysis Methods: The fraction of the intensity corresponding to the laser modes was determined by the ratio to the total spectral intensity of the electroluminescence signal measured in the wavelength range of 950–1350 nm.