研究目的
Investigating the performance of free-standing flexible photodetectors based on sulfur-hyperdoped ultrathin silicon for portable and wearable applications.
研究成果
The fabricated flexible photodetector based on sulfur-hyperdoped ultrathin silicon exhibits remarkable broadband photoresponse, high responsivity, and fast response times, making it suitable for flexible optoelectronic applications. The device's performance under bending tests indicates excellent mechanical durability and electrical stability.
研究不足
The study mentions that the dark current of the device is larger at a given voltage due to reduced material thickness and structural defects introduced during fabrication, which could be improved with surface treatments like passivation.
1：Experimental Design and Method Selection:
The study involved the fabrication of a flexible photodetector using sulfur-hyperdoped ultrathin silicon, prepared with a femtosecond laser in SF6 atmosphere, followed by rapid thermal annealing and electrode deposition.
2：Sample Selection and Data Sources:
Single-side polished n-type (100) Si wafers were used, chemically etched to achieve flexibility, and then processed with a femtosecond laser to create sulfur-hyperdoped silicon.
3：List of Experimental Equipment and Materials:
A Ti:sapphire laser for femtosecond laser processing, a vacuum chamber for SF6 atmosphere, a rapid thermal annealing system, and a semiconductor device analyzer for electrical characterization.
4：Experimental Procedures and Operational Workflow:
The process included preparation of flexible silicon, femtosecond laser irradiation in SF6, annealing, and deposition of aluminum electrodes.
5：Data Analysis Methods:
Spectral responsivity and external quantum efficiency were measured using a grating monochromator and lock-in amplifier, and response time was measured with an oscilloscope.
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