研究目的
To demonstrate the formation of high-resolution laser-induced graphene (LIG) using a visible 405 nm laser for flexible electronics and sensors that are not visible to the unaided eye.
研究成果
The use of a 405 nm laser enabled the formation of LIG with a spatial resolution of ~12 μm and a thickness of <5 μm, representing a >60% reduction in feature sizes compared to previous methods. This advancement allows for the creation of flexible electronics and sensors that are invisible to the unaided eye, expanding the utility of LIG in various applications.
研究不足
The LIG features are limited by the spatial resolution of the 405 nm laser. The reduced thickness of the LIG may affect its electrical properties compared to thicker LIG formed by IR lasers.
1：Experimental Design and Method Selection
A 405 nm visible laser was used to directly pattern polyimide (PI) into LIG. The laser system enabled precise control of laser irradiance, pulse width, and frequency.
2：Sample Selection and Data Sources
Commercial polyimide (McMaster-Carr) was used as the carbon precursor material.
3：List of Experimental Equipment and Materials
Fiber-coupled 405 nm laser diode, SEM chamber (FEI Nova Nanolab 600), Renishaw InVia Raman microscope, FEI Helios SEM, Shimadzu UV-3600 Plus, Desert Cryogenics model CPX-VF vacuum probe station, Agilent Semiconductor Parameter Analyzer model B1500A.
4：Experimental Procedures and Operational Workflow
The laser was focused on the SEM substrate via miniature focusing lenses. The stage movement was synchronized with the laser pulses to generate a raster pattern. LIG patterns were characterized by Raman spectroscopy and SEM imaging.
5：Data Analysis Methods
Raman spectroscopy was used to analyze the formation of LIG. Electrical characterization of LIG was performed in a vacuum probe station.
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