摘要： Accompanied with great advantages in various fields of performance, memristors show huge potential in the next generation of mainstream storage devices. However, their random distribution of resistance switching voltage has always been one of the problems in applications. In this present work, a nonvolatile resistive switching memory device was proposed, which employed CdSe/CdS core/shell quantum dots (QDs) assembled as an electrode modification layer with the device configuration of Pt/CdSe-CdS QDs/TaOx/Ta. The device possesses multiple excellent resistance switching characteristics such as lower and more consistent set/reset threshold voltage and better endurance performance, which is considered as the effect of the electrode modification layer based CdSe/CdS core/shell QDs. A model with uneven QDs/Pt electrode interface was put forward to explain the different resistance switching behaviors, which may be beneficial to the development of existing research about memristors based on metal oxides and quantum dots.