研究目的
To achieve high-performance perovskite quantum dot light-emitting diodes (PVQDLEDs) through a synergistic strategy of interfacial engineering and passivation.
研究成果
The study demonstrates a synergistic engineering strategy of post-passivation and charge transport to achieve high-performance PVQDLEDs. The inverted device with a p-n junction HTL and post-passivated QDs shows remarkable improvement in performance and stability, offering an effective approach for the application in displays and solid-state lighting.
研究不足
The stability of the devices is inferior to that of Br-related perovskite devices due to larger driving current, which likely induces heat accumulation or ion movements.
1：Experimental Design and Method Selection:
The study employs an inverted device structure with Zn0.95Mg0.05O as the electron transport layer and a p-n charge generation junction as the hole transport layer. A post-passivation technique is used to passivate CsPbBr3 QDs by supplementing Br anions.
2：95Mg05O as the electron transport layer and a p-n charge generation junction as the hole transport layer. A post-passivation technique is used to passivate CsPbBr3 QDs by supplementing Br anions. Sample Selection and Data Sources:
2. Sample Selection and Data Sources: CsPbBr3 QDs are synthesized and treated with Br anions for passivation. The performance of PVQDLEDs is evaluated based on luminance, turn-on voltage, and external quantum efficiency.
3：List of Experimental Equipment and Materials:
Includes U-4100 and NIR-300 spectrophotometers for absorption and PL spectra, Tecnai G20 for TEM imaging, Edinburgh instruments FS5 spectrometer for TRPL spectra and QY measurements, ESCALAB 250 XI X-ray photoelectron spectrometer for XPS analysis, and PR-670 SpectraScan with a Keithley 2400 source meter for electroluminescence characteristics.
4：Experimental Procedures and Operational Workflow:
Zn0.95Mg0.05O is deposited onto ITO-coated glass by spin-coating, followed by the deposition of CsPbBr3 QDs. NPB, HAT-CN, and MoO3/Al are thermally evaporated successively to complete the device fabrication.
5：95Mg05O is deposited onto ITO-coated glass by spin-coating, followed by the deposition of CsPbBr3 QDs. NPB, HAT-CN, and MoO3/Al are thermally evaporated successively to complete the device fabrication. Data Analysis Methods:
5. Data Analysis Methods: The performance of PVQDLEDs is analyzed based on luminance, current efficiency, power efficiency, and external quantum efficiency.
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U-4100
Hitachi
Measurement of absorption spectra
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NIR-300
Measurement of PL spectra
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Tecnai G20
FEI
Transmission electron microscopy imaging
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Edinburgh instruments FS5
Edinburgh Instruments
Measurement of time-resolved PL spectra and QY
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ESCALAB 250 XI
Thermo Fisher Scientific
X-ray photoelectron spectroscopy analysis
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PR-670 SpectraScan
Photo Research
Measurement of electroluminescence characteristics
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Keithley 2400
Keithley
Source meter for electroluminescence characteristics measurement
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Minolta luminance meter
LS-100
Minolta
Luminance calibration
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