研究目的
Investigating the photoluminescence and Raman spectroscopy of silicon thin films grown by laser ablation, focusing on the effects of thermal annealing, pressure, and temperature on their optical properties.
研究成果
Visible radiative emission at room temperature was detected in Si thin films after thermal annealing, with characteristics dependent on temperature and pressure. Raman spectroscopy confirmed the formation of Si nanocrystals with an average size of ~3 nm. The PL spectra suggest mechanisms related to surface defects and electron-hole pair recombination, depending on the conditions.
研究不足
The study is limited by the specific conditions of laser ablation and thermal annealing used, which may not be universally applicable. The interpretation of PL and Raman spectra is complex and may not account for all variables affecting the results.
