摘要： AlGaN films were grown on face-to-face annealed sputter-deposited AlN/sapphire (FFA Sp-AlN) templates via metalorganic vapor phase epitaxy (MOVPE), and the growth behavior of the AlGaN films was investigated. The sapphire substrates with small off-cut exhibited poor surface flatness of AlGaN grown on the FFA Sp-AlN templates owing to the formation of large hillock structures. To understand the origin of these hillock structures, the crystallinity and surface morphology of conventional fully MOVPE-grown AlN/sapphire (MOVPE-AlN) templates and the FFA Sp-AlN template were comprehensively studied. The screw- and mixed-type threading dislocation density of the FFA Sp-AlN template was estimated to be approximately 1.8 × 106 cm?2, which was two orders of magnitude lower than that of the MOVPE-AlN template. Consequently, the uniquely observed growth of the hillock structures in the FFA Sp-AlN templates was attributed to their low density of screw- and mixed-type threading dislocations. The large surface off-cut sapphire substrates suppressed the hillock structures on the FFA Sp-AlN templates. The improvement in surface flatness resulted in better optical properties of multiple quantum wells grown on the AlGaN layer. These results demonstrate a promising method for achieving highly efficient and cost effective AlGaN based deep ultraviolet light-emitting diodes.